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| BAV19 thru BAV21 Small-Signal Diode Fast Switching Diodes Features Silicon Epitaxial Planar Diode For general purpose This diode is also available in other case styles including: the MiniMELF case with the type designation BAV101 to BAV103. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted.) Parameter Continuous reverse voltage BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 (1) Symbol Limit 100 150 200 120 200 250 250 200 625 1.0 500 430 175 -65 to +175 Unit VR Volts Repetitive peak reverse voltage VRRM IF IF(AV) IFRM Volts mA mA mA Amp mW o Forward DC current at Tamb=25oC Rectified current (Average) half wave rectification with resist. load at Tamb=25oC (1) Repetitive peak forward current at f>50Hz, =180O, Tamb=25oC (1) Surge forward current at t<1s and Tj=25 C Power dissipation at Tamb=25oC (1) o IFSM Ptot (1) Thermal resistance junction to ambient air Junction temperature (1) RJA Tj C/W o C C Storage temperature range Notes: (1) TS o 1. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case 632 Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Forward voltage BAV19 BAV19 BAV20 BAV20 BAV21 BAV21 Symbol VF Test Condition IF=100mA IF=200mA VR=100V VR=100V, Tj=100OC VR=150V VR=150V, Tj=100OC VR=200V VR=200V, Tj=100OC IF=10mA VR=0V, f=1MHz IF=30mA, IR=30mA Irr=3mA, RL=100 Min. Typ. 5 1.5 Max. 1.00 1.25 100 15 100 15 100 15 50 Unit Volts nA uA nA uA nA uA pF ns Leakage current IR Dynamic forward resistance Capacitance Reverse recovery time f Ctot trr RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted.) 633 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted.) 634 |
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